Effects of temperature on the ion-induced bending of germanium and silicon nanowires

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Effects of temperature on the ion-induced bending of germanium and silicon nanowires. / Camara, Osmane; Hanif, Imran; Tunes, Matheus et al.
In: Materials Research Express : MRX, Vol. 4, No. 7, 075056, 01.07.2017.

Research output: Contribution to journal › Article › Research › peer-review

Harvard

Camara, O, Hanif, I, Tunes, M, Harrison, R, Greaves, G, Donnelly, S & Hinks, J 2017, 'Effects of temperature on the ion-induced bending of germanium and silicon nanowires', Materials Research Express : MRX, vol. 4, no. 7, 075056. https://doi.org/10.1088/2053-1591/aa7e05

APA

Camara, O., Hanif, I., Tunes, M., Harrison, R., Greaves, G., Donnelly, S., & Hinks, J. (2017). Effects of temperature on the ion-induced bending of germanium and silicon nanowires. Materials Research Express : MRX, 4(7), Article 075056. https://doi.org/10.1088/2053-1591/aa7e05

Vancouver

Camara O, Hanif I, Tunes M, Harrison R, Greaves G, Donnelly S et al. Effects of temperature on the ion-induced bending of germanium and silicon nanowires. Materials Research Express : MRX. 2017 Jul 1;4(7):075056. doi: 10.1088/2053-1591/aa7e05

Author

Camara, Osmane ; Hanif, Imran ; Tunes, Matheus et al. / Effects of temperature on the ion-induced bending of germanium and silicon nanowires. In: Materials Research Express : MRX. 2017 ; Vol. 4, No. 7.

Bibtex - Download

@article{f5cbe80d6df94dfdbde3cb8b819a11e9,
title = "Effects of temperature on the ion-induced bending of germanium and silicon nanowires",
keywords = "Bending of nanowires, High temperature, In situ transmission electron microscopy, Nano-manipulation, Nanowires, Radiation damage, Semiconductors",
author = "Osmane Camara and Imran Hanif and Matheus Tunes and Robert Harrison and Graeme Greaves and Stephen Donnelly and Jonathan Hinks",
year = "2017",
month = jul,
day = "1",
doi = "10.1088/2053-1591/aa7e05",
language = "English",
volume = "4",
journal = "Materials Research Express : MRX",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "7",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Effects of temperature on the ion-induced bending of germanium and silicon nanowires

AU - Camara, Osmane

AU - Hanif, Imran

AU - Tunes, Matheus

AU - Harrison, Robert

AU - Greaves, Graeme

AU - Donnelly, Stephen

AU - Hinks, Jonathan

PY - 2017/7/1

Y1 - 2017/7/1

KW - Bending of nanowires

KW - High temperature

KW - In situ transmission electron microscopy

KW - Nano-manipulation

KW - Nanowires

KW - Radiation damage

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=85027161309&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/aa7e05

DO - 10.1088/2053-1591/aa7e05

M3 - Article

AN - SCOPUS:85027161309

VL - 4

JO - Materials Research Express : MRX

JF - Materials Research Express : MRX

SN - 2053-1591

IS - 7

M1 - 075056

ER -

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