Effects of temperature on the ion-induced bending of germanium and silicon nanowires
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in: Materials Research Express : MRX, Jahrgang 4, Nr. 7, 075056, 01.07.2017.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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TY - JOUR
T1 - Effects of temperature on the ion-induced bending of germanium and silicon nanowires
AU - Camara, Osmane
AU - Hanif, Imran
AU - Tunes, Matheus
AU - Harrison, Robert
AU - Greaves, Graeme
AU - Donnelly, Stephen
AU - Hinks, Jonathan
PY - 2017/7/1
Y1 - 2017/7/1
KW - Bending of nanowires
KW - High temperature
KW - In situ transmission electron microscopy
KW - Nano-manipulation
KW - Nanowires
KW - Radiation damage
KW - Semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85027161309&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/aa7e05
DO - 10.1088/2053-1591/aa7e05
M3 - Article
AN - SCOPUS:85027161309
VL - 4
JO - Materials Research Express : MRX
JF - Materials Research Express : MRX
SN - 2053-1591
IS - 7
M1 - 075056
ER -