Ion-beam-induced bending of semiconductor nanowires
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In: Nanotechnology, Vol. 29, No. 33, 335701, 08.06.2018.
Research output: Contribution to journal › Article › Research › peer-review
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TY - JOUR
T1 - Ion-beam-induced bending of semiconductor nanowires
AU - Hanif, Imran
AU - Camara, Osmane
AU - Tunes, Matheus A.
AU - Harrison, Robert W.
AU - Greaves, Graeme
AU - Donnelly, Stephen E.
AU - Hinks, Jonathan A.
PY - 2018/6/8
Y1 - 2018/6/8
KW - in situ transmission electron microscopy
KW - ion irradiation-induced bending
KW - radiation damage
KW - semiconductor nanowires
UR - http://www.scopus.com/inward/record.url?scp=85049002275&partnerID=8YFLogxK
U2 - 10.1088/1361-6528/aac659
DO - 10.1088/1361-6528/aac659
M3 - Article
AN - SCOPUS:85049002275
VL - 29
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 33
M1 - 335701
ER -