Ion-beam-induced bending of semiconductor nanowires

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Ion-beam-induced bending of semiconductor nanowires. / Hanif, Imran; Camara, Osmane; Tunes, Matheus A. et al.
In: Nanotechnology, Vol. 29, No. 33, 335701, 08.06.2018.

Research output: Contribution to journalArticleResearchpeer-review

Harvard

Hanif, I, Camara, O, Tunes, MA, Harrison, RW, Greaves, G, Donnelly, SE & Hinks, JA 2018, 'Ion-beam-induced bending of semiconductor nanowires', Nanotechnology, vol. 29, no. 33, 335701. https://doi.org/10.1088/1361-6528/aac659

APA

Hanif, I., Camara, O., Tunes, M. A., Harrison, R. W., Greaves, G., Donnelly, S. E., & Hinks, J. A. (2018). Ion-beam-induced bending of semiconductor nanowires. Nanotechnology, 29(33), Article 335701. https://doi.org/10.1088/1361-6528/aac659

Vancouver

Hanif I, Camara O, Tunes MA, Harrison RW, Greaves G, Donnelly SE et al. Ion-beam-induced bending of semiconductor nanowires. Nanotechnology. 2018 Jun 8;29(33):335701. doi: 10.1088/1361-6528/aac659

Author

Hanif, Imran ; Camara, Osmane ; Tunes, Matheus A. et al. / Ion-beam-induced bending of semiconductor nanowires. In: Nanotechnology. 2018 ; Vol. 29, No. 33.

Bibtex - Download

@article{9db1dae9867941c0bab7093ef1e6102a,
title = "Ion-beam-induced bending of semiconductor nanowires",
keywords = "in situ transmission electron microscopy, ion irradiation-induced bending, radiation damage, semiconductor nanowires",
author = "Imran Hanif and Osmane Camara and Tunes, {Matheus A.} and Harrison, {Robert W.} and Graeme Greaves and Donnelly, {Stephen E.} and Hinks, {Jonathan A.}",
year = "2018",
month = jun,
day = "8",
doi = "10.1088/1361-6528/aac659",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "33",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Ion-beam-induced bending of semiconductor nanowires

AU - Hanif, Imran

AU - Camara, Osmane

AU - Tunes, Matheus A.

AU - Harrison, Robert W.

AU - Greaves, Graeme

AU - Donnelly, Stephen E.

AU - Hinks, Jonathan A.

PY - 2018/6/8

Y1 - 2018/6/8

KW - in situ transmission electron microscopy

KW - ion irradiation-induced bending

KW - radiation damage

KW - semiconductor nanowires

UR - http://www.scopus.com/inward/record.url?scp=85049002275&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aac659

DO - 10.1088/1361-6528/aac659

M3 - Article

AN - SCOPUS:85049002275

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 33

M1 - 335701

ER -